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A modern take on microelectronic device engineering.
Microelectronics is a 50-year-old engineering discipline still undergoing rapid evolution and societal adoption. Integrated Microelectronic Devices: Physics and Modeling fills the need for a rigorous description of semiconductor device physics that is relevant to modern nanoelectronics. The central goal is to present the fundamentals of semiconductor device operation with relevance to modern integrated microelectronics. Emphasis is devoted to frequency response, layout, geometrical effects, parasitic issues and modeling in integrated microelectronics devices (transistors and diodes). In addition to this focus, the concepts learned here are highly applicable in other device contexts.
This book is based on my experience in teaching 6.720J/3.43J Integrated Microelectronic Devices, a semester-long graduate student subject jointly offered in the Departments of Electrical Engineering and Computer Science (EECS) and Materials Science and Engineering (MS&E) at Massachusetts Institute of Technology (MIT). Typically, the class is composed of graduate students in EECS, Materials Science, Mechanical Engineering, Chemical Engineering and Physics plus a few seniors in the same departments. Graduate students in EECS and MS&E with interest in semiconductor materials and devices are strongly encouraged to take this subject their very first semester at MIT. While the book originated in a graduate course at MIT, it has been constructed to be productively used in an advanced undergraduate subject at the junior/senior level, as explained below.
The central goal of this book is to present the fundamentals of semiconductor device operation with relevance to modern integrated microelectronics (as opposed to, say, photonics, energy conversion devices, or power electronics). This means that no optical devices nor power devices of any kind are described. In contrast, emphasis is devoted to frequency response, layout, geometrical effects, parasitic issues and modeling in integrated microelectronics devices (transistors and diodes). In spite of this focus, the concepts learned here are highly applicable in other device contexts. This book should be a great resource for a broad range of students with a diverse set of interests.
Contents
Preface xv About the Author xix 1 Electrons, Photons, and Phonons
Selected Concepts of Quantum Mechanics
The dual nature of the photon
The dual nature of the electron
Electrons in confined environments
Selected Concepts of Statistical Mechanics
Thermal motion and thermal energy
Thermal equilibrium
Electron statistics
Selected Concepts of Solid-State Physics
Bonds and bands
Metals, insulators, and semiconductors
Density of states
Lattice vibrations: phonons
Summary
Further reading Problems
Carrier Statistics in Equilibrium
Conduction and Valence Bands-- Bandgap-- Holes
Intrinsic Semiconductor
Extrinsic Semiconductor
Donors and acceptors
Charge neutrality
Equilibrium carrier concentration in a doped semiconductor
Carrier Statistics in Equilibrium
Conduction and valence band density of states
Equilibrium electron concentration
Equilibrium hole concentration
np product in equilibrium
Location of Fermi level
Summary
Further Reading Problems
Carrier Generation and Recombination
Generation and Recombination Mechanisms
Thermal Equilibrium: Principle of Detailed Balance
Generation and Recombination Rates in Thermal Equilibrium
Band-to-band optical generation and recombination
Auger generation and recombination
Trap-assisted thermal generation and recombination
Generation and Recombination Rates Outside Equilibrium
Quasi-neutral low-level injection-- recombination lifetime
Extraction-- generation lifetime
Dynamics of Excess Carriers in Uniform Situations
Example 1: Turn-on transient
Example 2: Turn-off transient
Example 3: A pulse of light
Surface Generation and Recombination
Summary
Further Reading Problems 4 Carrier Drift and Diffusion
Thermal Motion
Thermal velocity
Scattering
Drift
Drift velocity
Velocity saturation
Drift current
Energy band diagram under electric field
Diffusion
Fick's first law
The Einstein relation
Diffusion current
Transit Time
Nonuniformly Doped Semiconductor in Thermal Equilibrium
Gauss' law
The Boltzmann relations
Equilibrium carrier concentration
Quasi-Fermi Levels and Quasi-Equilibrium
Summary
Further Reading Problems 5 Carrier Flow
Continuity Equations
Surface Continuity Equations
Free surface
Ohmic contact
Shockley Equations
Simplifications of Shockley Equations to One-Dimensional Quasi-Neutral Situations
Majority-Carrier Situations
Example 1: Semiconductor bar under voltage
Example 2: Integrated resistor
Minority-Carrier Situations
Example 3: Diffusion and bulk recombination in a "long" bar
Example 4: Diffusion and surface recombination in a "short" bar
Length scales of minority carrier situations
Dynamics of Majority-Carrier Situations
Dynamics of Minority-Carrier Situations
Example 5: Transient in a bar with S = â
Transport in Space-Charge and High-Resistivity Regions
Example 6: Drift in a high-resistivity region under external electric field
Comparison between SCR and QNR transport
Carrier Multiplication and Avalanche Breakdown
Example 7: Carrier multiplication in a high-resistivity region with uniform electric field
Summary
Further Reading Problems
PN Junction Diode
The Ideal PN Junction Diode
Ideal PN Junction in Thermal Equilibrium
Current-Voltage Characteristics of The Ideal PN Diode
Electrostatics under bias
I-V characteristics: qualitative discussion
I-V characteristics: quantitative models
Charge-Voltage Characteristics of Ideal PN Diode
Depletion charge
Minority carrier charge
Equivalent Circuit Models of The Ideal PN Diode
Nonideal and Second-Order Effects
Short diode
Space-charge generation and recombination
Series resistance
Breakdown voltage
Nonuniform doping distributions
High-injection effects
Integrated PN Diode
Isolation
Series resistance
High-low junction
Summary
Further Reading Problem
Schottky Diode and Ohmic Contact
The Ideal Schottky Diode
Ideal Schottky Diode in Thermal Equilibrium
A simpler system: a metal-metal junction
Energy band lineup of metal-semiconductor junction
Electrostatics of metal-semiconductor junction in equilibrium
Current-Voltage Characteristics of Ideal Schottky
Electrostatics under bias
I-V characteristics: qualitative discussion
I-V characteristics: thermionic emission model
Charge-Voltage Characteristics of Ideal Schottky Diode
Equivalent Circuit Models for The Ideal Schottky Diode
Nonideal and Second-Order Effects
Series resistance
Breakdown voltage
Integrated Schottky Diode
Ohmic Contacts
Lateral ohmic contact: transmission-line model
Boundary conditions imposed by ohmic contacts
Summary
Further Reading Problems 8 The Si Surface and the Metal-OxideSemiconductor Structure
The Semiconductor Surface
The Ideal Metal-Oxide-Semiconductor Structure
The Ideal Metal-Oxide-Semiconductor Structure at Zero Bias
General relations for the electrostatics of the ideal MOS structure
Electrostatic of the MOS structure under zero bias
The Ideal Metal-Oxide Semiconductor Structure Under Bias
Depletion
Flatband
Accumulation
Threshold
Inversion
Summary of charge-voltage characteristics
Dynamics of The MOS Structure
Quasi-static C-V characteristics
High-frequency C-V characteristics
Deep depletion
Weak Inversion and The Subthreshold Regime
Three-Terminal MOS Structure
Summary
Further Reading Problems
The "Long" Metal-Oxide-Semiconductor Field-Effect Transistor
The Ideal MOSFET
Qualitative Operation of The Ideal MOSFET
Inversion Layer Transport in The Ideal MOSFET
Current-Voltage Characteristics of The Ideal MOSFET
The cut-off regime 9.4.2 The linear regime
The saturation regime
DC large-signal equivalent-circuit model of ideal MOSFET
Energy band diagrams
Charge-Voltage Characteristics of The Ideal MOSFET
Depletion charge
Inversion charge
Small-Signal Behavior of Ideal MOSFET
Small-signal equivalent circuit model of ideal MOSFET
Short-circuit current-gain cut-off frequency, fT, of ideal MOSFET in saturation
Nonideal Effects in MOSFET
Body effect
Effect of back bias
Channel-length modulation
The subthreshold regime
Source and drain resistance
Summary
Further Reading Problems
The "Short" Metal-Oxide-Semiconductor Field-Effect Transistor
MOSFET Short-Channel Effects: Transport
Mobility degradation
Velocity saturation
MOSFET Short-Channel Effects: Electrostatics
Threshold voltage dependence on gate length: VT rolloff
Threshold voltage dependence on VDS: drain-induced barrier lowering (DIBL)
Subthreshold swing dependence on gate length and VDS
MOSFET Short-Channel Effects: Gate Stack Scaling
Gate capacitance
Gate leakage current
MOSFET High-Field Effects
Electrostatics of velocity saturation region
Impact ionization and substrate current
Output conductance
Gate-induced drain leakage
MOSFET Scaling
The MOSFET as a switch
Constant field scaling of the ideal MOSFET
Constant voltage scaling of the ideal MOSFET
Generalized scaling of short MOSFETs
MOSFET scaling: a historical perspective
Evolution of MOSFET design
Summary
Further Reading Problems
The Bipolar Junction Transistor
The Ideal BJT
Current-Voltage Characteristics of The Ideal BJT
The forward-active regime
The reverse regime
The cut-off regime
The saturation regime
Output I-V characteristics
Charge-Voltage Characteristics of Ideal BJT
Depletion charge 1
Minority carrier charge.
(source: Nielsen Book Data)
Publisher's summary
A modern take on microelectronic device engineering Microelectronics is a 50-year-old engineering discipline still undergoing rapid evolution and societal adoption. Integrated Microelectronic Devices: Physics and Modeling fills the need for a rigorous description of semiconductor device physics that is relevant to modern nanoelectronics. The central goal is to present the fundamentals of semiconductor device operation with relevance to modern integrated microelectronics. Emphasis is devoted to frequency response, layout, geometrical effects, parasitic issues and modeling in integrated microelectronics devices (transistors and diodes). In addition to this focus, the concepts learned here are highly applicable in other device contexts. This text is suitable for a one-semester junior or senior-level course by selecting the front sections of selected chapters (e.g. 1-9). It can also be used in a two-semester senior-level or a graduate-level course by taking advantage of the more advanced sections.
(source: Nielsen Book Data)
There are two distinct parts to this book. The first five chapters introduce fundamental aspects of semiconductor physics pertaining to microelectronic devices: band structure, electron statistics, generation and recombination, drift and diffusion, and minority and majority carrier situations. Each chapter gives in its main body a general description suitable for a junior/senior-level or a first-year graduate course. These chapters also include at the end a number of advanced topics that can be selected individually to provide further depth. These can be the basis of a more advanced graduate subject.
Six device chapters follow with a similar outline. After a brief introductory section, the main body of the chapter presents a first-order, physically meaningful description of device physics and operation of an “ideal device”. The ideal device is stripped down to its very essence, preserving the key physics, and is analyzed in a simple and intuitive way. The ideal device, constructed and studied this way, is therefore an excellent vehicle to learn device physics at the junior/senior level. One or more of the following sections present significant non idealities, important second-order effects and other considerations that are relevant in “real” devices. These are suitable topics for graduate courses. To some extent, teachers of graduate subjects will be able to pick and choose topics from these latter sections since they are rather independent of one another. Every chapter finishes with a set of advanced topics that contain more advanced graduate-level material also amenable to individual selection.
This text is suitable for a one-semester junior or senior-level course by selecting the front sections of selected chapters (e.g. 1-9). It can also be used in a two-semester senior-level or a graduate-level course by taking advantage of the more advanced sections